v dss = 100v i d25 = 60a r ds(on) = 0.023 dynamic dv/dt rating 175 ? c operating t e mperature fast sw itching ease of paralleling simple drive requirements description third generation hexfet s from internat ional rectifier provide the designer with the best combination of fast sw itching, ruggedized dev ice design, low on-resistance and cost-ef f ectiveness. the t o -220 package is universally pref erred for all commercial-industrial applications at power dissipation levels to approximately 50watts. the low thermal resistance and low package cost of the t o -220 contribute to its pin 1?gate pin 2?drain pin 3?so u r ce wide acceptance thr oughout the industry . absolute maximum ratings parameter max. units i d @t c =25 ? c continuous drain current, v gs @10v 60 i d @t c =100 ? c continuous drain current, v gs @10v 40 i dm pulsed drain current 230 a p d @t c =25 ? c power dis s i pation 200 w linear derating factor 1.3 w/ ? c v gs gate-to-source v o ltage 20 v e as single pulse a v alanche energy 20 mj dv/dt peak diode recovery dv/dt 5.8 v/ns t j t stg operating junction and storage t e mperature range C 55 to +175 soldering t e mperature, for 10 seconds 300(1.6mm from case) ? c mounting t o rque,6-32 or m3 screw 10 ibf in(1.1n m) thermal resistance parameter min. ty p . max. units r jc junction-to-case 0.75 r cs case-to-sink, flat, greased surface 0.50 r ja junction-to-ambient 62 ? c/w 1 hexfet ? power mosfet e 3710
electrical characteristics @t j =25 ? c(unless otherw ise specified) parameter min. ty p . max. units t e st conditions v (br)dss drain-to-source breakdown v o ltage 100 v v gs =0v , i d = 250ua v (br)dss / t j breakdown v o ltage t e mp. coef ficient 0.13 v/ ? c reference to 25 ? c,i d =1ma r ds(on) static drain-to-source on-resistance 0.023 v gs =10v ,i d =28a v gs(th) gate threshold v o ltage 2.0 4.0 v v ds =v gs , i d =250a g fs forward t r ansconductance 25 s v ds =25v ,i d =28a 25 v ds =100v ,v gs =0v i dss drain-to-source leakage current 250 a v ds =80v ,v gs =0v , t j =150 ? c gate-to-source forward leakage 100 v gs =20v i gss gate-to-source reverse leakage -100 na v gs =-20v q g t o tal gate charge 130 q gs gate-to-source charge 26 q gd gate-to-drain ("miller") charge 43 nc i d = 2 8 a v ds = 8 0 v v gs =10v see fig.6 and 13 t d(on) tu r n - o n d e l a y ti m e 12 t r ris e t i me 58 t d(of f) t u rn-of f delay t i me 45 t f fall t i me 47 ns v dd = 5 0 v i d = 2 8 a r g =2.5 ? v gs =10v see figure 10 l d internal drain inductance 4.5 l s internal source inductance 7.5 nh between lead, 6mm(0.25in.) from package and center of die contact c iss input capacitance 3130 c oss output capacitance 410 c rs s reverse t r ansfer capacitance 72 pf v gs = 0 v v ds = 2 5 v f =1.0mh z see figure 5 sour ce-drain ratings and characteristics parameter min. ty p . max. units t e st conditions i s continuo us source curr ent . (body diode) 57 i sm pulsed sour ce curre nt . (body diode) 230 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward v o ltage 1.2 v t j =25 ? c,i s =28a,v gs =0v t rr revers e rec o very t i me 140 220 ns q rr reverse recovery charge 670 1010 nc t j =25 ? c,i f =28a di/dt=100a/s t on forward t u rn-on t i me intrinsic turn-on time is negligible (turn-on is dominated by ls + l d ) notes: repetitive rating; pulse width limited by isd 28a,di/dt 250a/ s,vdd v(br)dss, max. junction temperature(see figure 1 1 ) tj 175 ? c vdd=25v ,starting tj=25 ? c , l = 0 . 7 0 m h pulse width 300 s ; dut y cy cle 2%. rg=25 ias=28a(see figure 12) 2 hexfet ? power mosfet e 3710
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